Recent Configurational Advances for Solid-State Lithium Batteries Featuring Conversion-Type Cathodes.

Solid-state lithium metal batteries offer superior energy density, longer lifespan, and enhanced safety compared to traditional liquid-electrolyte batteries. Their development has the potential to revolutionize battery technology, including the creation of electric vehicles with extended ranges and smaller more efficient portable devices. The employment of metallic lithium as the negative electrode allows the use of Li-free positive electrode materials, expanding the range of cathode choices and increasing the diversity of solid-state battery design options. In this review, we present recent developments in the configuration of solid-state lithium batteries with conversion-type cathodes, which cannot be paired with conventional graphite or advanced silicon anodes due to the lack of active lithium. Recent advancements in electrode and cell configuration have resulted in significant improvements in solid-state batteries with chalcogen, chalcogenide, and halide cathodes, including improved energy density, better rate capability, longer cycle life, and other notable benefits. To fully leverage the benefits of lithium metal anodes in solid-state batteries, high-capacity conversion-type cathodes are necessary. While challenges remain in optimizing the interface between solid-state electrolytes and conversion-type cathodes, this area of research presents significant opportunities for the development of improved battery systems and will require continued efforts to overcome these challenges.

Time dependence of negative and positive photoconductivity for Si δ-doped AlGaAs/InGaAs/AlGaAs quantum well under various temperatures and various incident photon energies and intensities.

Si δ-doped AlGaAs/InGaAs/AlGaAs quantum well (QW) structure is commonly adopted as one of the core elements in modern electric and optoelectronic devices. Here, the time dependent photoconductivity spectra along the active InGaAs QW channel in a dual and symmetric Si δ-doped AlGaAs/InGaAs/AlGaAs QW structure are systematically studied under various temperatures (T = 80-300 K) and various incident photon energies (E in = 1.10-1.88 eV) and intensities. In addition to positive photoconductivity, negative photoconductivity (NPC) was observed and attributed to two origins. For T = 180-240 K with E in = 1.51-1.61 eV, the trapping of the photo-excited electrons by the interface states located inside the conduction band of InGaAs QW layer is one of the origins for NPC curves. For T = 80-120 K with E in = 1.10-1.63 eV, the photoexcitation of the excess 'supersaturated' electrons within the active InGaAs QW caused by the short cooling process is another origin.

Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis.

Temperature (T = 40 ~ 300 K) dependence of Hall-effect analysis on the dual Si-δ-doped AlGaAs/InGaAs/AlGaAs quantum-well (QW) structures with various space layer thicknesses (tS = 5, 10 and 15 nm) was performed. An interesting hysteresis behavior of electron sheet concentration [n2D(T)] was observed for tS = 10 and 15 nm but not for tS = 5 nm. A model involving two different activation barriers encountered respectively by electrons in the active QW and by electrons in the δ-doped layers is proposed to account for the hysteresis behavior. However, for small enough tS (= 5 nm ≤ 2.5 s, where s = 2.0 nm is the standard deviation of the Gaussian fit to the Si-δ-doped profile), the distribution of Si dopants near active QW acted as a specific form of "modulation doping" and can not be regarded as an ideal δ-doping. These Si dopants nearby the active QW effectively increase the magnitude of n2D, and hence no hysteresis curve was observed. Finally, effects from tS on the T-dependence of electron mobility in active QW channel are also discussed.

Enhanced photoluminescence of InGaAs/AlGaAs quantum well with tungsten disulfide quantum dots.

The pristine and diethylenetriamine (DETA)-doped tungsten disulfide quantum dots (WS2 QDs) with an average lateral size of about 5 nm have been synthesized using pulsed laser ablation (PLA). Introduction of the synthesized WS2 QDs on the InGaAs/AlGaAs quantum wells (QWs) can improve the photoluminescence (PL) of the InGaAs/AlGaAs QW as high as 6 fold. On the basis of the time-resolved PL and Kelvin probe measurements, the PL enhancement is attributed to the carrier transfer from the pristine or DETA-doped WS2 QDs to the InGaAs/AlGaAs QW. A heterostructure band diagram is proposed for explaining the carrier transfer, which increases the hole densities in the QW and enhances its PL intensity. This study is expected to be beneficial for the development of the InGaAs-based optoelectronic devices.

The Way to Pursue Truly High-Performance Perovskite Solar Cells.

The power conversion efficiency (PCE) of single-junction solar cells was theoretically predicted to be limited by the Shockley-Queisser limit due to the intrinsic potential loss of the photo-excited electrons in the light absorbing materials. Up to now, the optimized GaAs solar cell has the highest PCE of 29.1%, which is close to the theoretical limit of ~33%. To pursue the perfect photovoltaic performance, it is necessary to extend the lifetimes of the photo-excited carriers (hot electrons and hot holes) and to collect the hot carriers without potential loss. Thanks to the long-lived hot carriers in perovskite crystal materials, it is possible to completely convert the photon energy to electrical power when the hot electrons and hot holes can freely transport in the quantized energy levels of the electron transport layer and hole transport layer, respectively. In order to achieve the ideal PCE, the interactions between photo-excited carriers and phonons in perovskite solar cells has to be completely understood.

Characterization of coumarin-6 polycrystalline films growth from vacuum deposition at various substrate temperatures.

Coumarin-6 polycrystalline films were fabricated from vacuum deposition at various substrate temperatures Tsub from 106 to 178 °C with a fixed source temperature of 185 °C. Because of its slenderer and more asymmetric structure, the adhered coumarin-6 molecule on top of the growing interface encounters a larger steric energetic barrier of 0.92 eV as estimated from the Arrhenius plot of growth rate versus 1/Tsub. From top-view SEM pictures, the as-deposited coumarin-6 thin films exhibit a twisted pattern and a kinematic roughness for Tsub < 150 °C; while clear facets emerge for Tsub ≥ 150 °C due to the increase of surface diffusion energy of the adhered molecules. From XRD analysis, besides the confirmation of the triclinic structure two anomalous peaks observed at 2θ ~ 9.007° and 7.260° are explained due to the co-existence of N- and S-coumarin-6-isomers within the crystalline grains. Furthermore, for coumarin-6 polycrystalline films deposited at Tsub = 150 °C with high crystallinity of the constituent grains, the bandgap determined from optical transmission is around 2.392 eV; and from photoluminescence spectra, the fitted four emission components are assigned to the Frenkel and charge transfer excitons recombination with participation of molecular vibrational states.

Role of molecular conformations in rubrene polycrystalline films growth from vacuum deposition at various substrate temperatures.

We report on the optical and structural characterization of rubrene polycrystalline films fabricated from vacuum deposition with various substrate temperatures (Tsub). Depending on Tsub, the role of twisted and planar rubrene conformational isomers on the properties of rubrene films is focused. The temperature (T)-dependent inverse optical transmission (IOT) and photoluminescence (PL) spectra were performed on these rubrene films. The origins of these IOT and PL peaks are explained in terms of the features from twisted and planar rubrene molecules and of the band characteristics from rubrene molecular solid films. Here, two rarely reported weak-peaks at 2.431 and 2.605 eV were observed from IOT spectra, which are associated with planar rubrene. Besides, the T-dependence of optical bandgap deduced from IOT spectra is discussed with respect to Tsub. Together with IOT and PL spectra, for Tsub > 170 °C, the changes in surface morphology and unit cell volume were observed for the first time, and are attributed to the isomeric transformation from twisted to planar rubrenes during the deposition processes. Furthermore, a unified schematic diagram in terms of Frenkel exciton recombination is suggested to explain the origins of the dominant PL peaks performed on these rubrene films at 15 K.